System delivers powerful resolution and contrast on a fast, easy-to-use platform for precise measurement of sensitive materials in semiconductor and materials science applications.
FEI, a leading instrumentation company providing imaging and analysis systems for research and industry, extends its leadership in the high-resolution scanning electron microscopy (SEM) market with the launch of the new Verios™ XHR SEM. The Verios provides the sub-nanometer resolution and enhanced contrast needed for precise measurements on beam-sensitive materials in advanced semiconductor manufacturing and materials science applications.
“The Verios XHR SEM extends the lifetime of SEM as an important measurement tool in semiconductor process control labs by allowing engineers to measure beam-sensitive materials and structures that are too small for conventional SEM,” stated Rudy Kellner, vice president & general manager, Electronics Business Unit, FEI. “When combined with our IC3D™ software, the Verios is a robust instrument that can provide the precise measurements they need to control processes at the 22nm technology node and below.”
The Verios is the second generation of FEI’s leading XHR SEM family. At low kV, where the performance of conventional SEM degrades significantly, the Verios system’s advanced optics deliver impressive sensitivity to surface detail. It allows any user to switch quickly between various operating conditions, maintain sample cleanliness, and obtain sub-nanometer resolution at any accelerating voltage from 1 kV to 30 kV.
In addition to its extreme high-resolution performance, the Verios introduces new detection technologies. The optimized signal collection and advanced filtering abilities not only provide higher and more flexible contrast generation, but also allow for a greater range of samples to be investigated. Many beam-sensitive or non-conductive materials can now be accurately observed at the nanoscale, without any preparation.