ZEISS - ΣIGMA VP
Manufactured by ZEISS
Field Emission-SEM for advanced analytical microscopy
The ΣIGMA series of Field Emission Scanning Electron Microscopes (FE-SEM) delivers advanced analytical microscopy with the high performance you expect from Carl Zeiss. Equipped with the GEMINI column with its in-lens secondary electron detection, the ΣIGMA series brings you analytical performance, integrated workflows and increased productivity.
For the imaging of non-conducting samples, variable pressure modes of operation are available with ΣIGMA VP.
ΣIGMA VP is equipped with variable pressure (VP) technology for exceptional imaging and analysis of non-conductive specimens. It is compatible with a wealth of accessories including the class leading BSD and VPSE G3 detectors for superior materials contrast and SE imaging in VP.
ΣIGMA VP can handle specimen of up to 250mm diameter and 145mm tall. Furthermore, the coplanar chamber design provides the ideal geometry for simultaneous EDS and electron backscattered diffraction (EBSD). Materials analysis at high resolution is provided by the class leading X-ray geometry for both energy (EDS) and wavelength dispersive spectroscopy (WDS).
ΣIGMA VP offers many advantages for life science applications. The high purity, in-lens, SE detection allows true surface imaging for crisp images of bacteria, cells, plants and organisms. In combination with ATLAS software, high resolution, extreme field of view imaging is possible with image sizes of up to 32k by 32k pixels.
With ΣIGMA VP, it is possible to examine large sections from brain, kidney, nanopathology and forensic samples or other tissues. ΣIGMA VP, in combination with 3View ultramicrotome, allows for high resolution, 3D imaging of tissues and even whole organisms, such as Drosophila, zebrafish or plants.
For the imaging of non-conducting samples, variable pressure modes of operation are available with ΣIGMA VP.
ΣIGMA VP is equipped with variable pressure (VP) technology for exceptional imaging and analysis of non-conductive specimens. It is compatible with a wealth of accessories including the class leading BSD and VPSE G3 detectors for superior materials contrast and SE imaging in VP.
ΣIGMA VP can handle specimen of up to 250mm diameter and 145mm tall. Furthermore, the coplanar chamber design provides the ideal geometry for simultaneous EDS and electron backscattered diffraction (EBSD). Materials analysis at high resolution is provided by the class leading X-ray geometry for both energy (EDS) and wavelength dispersive spectroscopy (WDS).
ΣIGMA VP offers many advantages for life science applications. The high purity, in-lens, SE detection allows true surface imaging for crisp images of bacteria, cells, plants and organisms. In combination with ATLAS software, high resolution, extreme field of view imaging is possible with image sizes of up to 32k by 32k pixels.
With ΣIGMA VP, it is possible to examine large sections from brain, kidney, nanopathology and forensic samples or other tissues. ΣIGMA VP, in combination with 3View ultramicrotome, allows for high resolution, 3D imaging of tissues and even whole organisms, such as Drosophila, zebrafish or plants.
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Features of ΣIGMA VP
Your complete solution from Carl Zeiss
Use ΣIGMA VP 3View with variable pressure for optimal charge neutralization. Your system runs with unbeatable long term stability without any user intervention.
Large field of view
ZEISS GEMINI technology delivers up to 32k x 24k pixels in one scan at nm resolution. You image even large fields of view without blurring at the edges. And you won’t need to stitch images for most applications.
Highest speed
Depending on your application you get your 3D results up to 10 times faster with 3View. Speed up your application with ΣIGMA VP’s unique high current mode.
General Specifications
| Magnification | 12 to 1000000 x |
| Accelerating voltage | 0.1 to 30 kV |
| Electron Microscope Type | SEM |
| Probe Current | 4 pA – 20 nA (40 nA optional for SIGMATM HV) |
| Microscope Type | Electron |
Additional Specifications
Resolution: 1.3 nm @ 20 kV, 1.5 nm @ 15 kV, 2.8 nm @ 1 kV, & 2.5 nm @ 30 kV (in VP mode)
Electron Emitter: Thermal field emission type
