Hiden Analytical - IMP End Point Detector

Manufactured by  Hiden Analytical
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The only dedicated end point determination tool for ion etch control and optimum process quality.

The IMP is a differentially pumped, ruggedized secondary ion mass spectrometer for the analysis of secondary ions and neutrals from the ion mill process.

  1. End point Analysis.
  2. Target Impurity Determination.
  3. Quality Control / SPC.
  4. Residual Gas Analysis.
  5. Leak Detection

Production Control In Ion Beam Etching
Hiden IMP Probes are designed for precise control in Ion Beam Etching applications. Bringing together a high performance quadrupole mass filter, integral electron impact ioniser, compact energy analyser and ion optics for direct analysis of etch process secondary ions; the system provides for routine, user friendly monitoring and control of etch processes.

In-Situ Process Characterisation
The Hiden IMP Probe features Windows™ MASsoft PC software for automatic selection of the etch products from an internal library of device structures. During the milling process ions with a mass which is characteristic of the material to be etched are monitored. The rapid response to step changes in signal intensity of these ions provides for precise determination of end points and material interfaces. Integration with the production tool then ensures reduced undercutting and overetching, maximised feature control and selectivity, and no incomplete etching. Additionally the probe operates as a residual gas analyser for base pressure analysis, process gas monitoring and leak detection.

The Hiden IMP Probe Provides:

  1. Fast identification of device interfaces
  2. Enhanced sensitivity for complex multilayer structures
  3. Auto-Select and recognition of end point species
  4. Contamination resistant design for increased uptime
  5. Process control through machine tool integration
  6. Base pressure residual gas analysis and leak detection

Process Control By Application Specific Outputs
The Hiden IMP Probe features a range of output facilities allowing termination of etching processes to be accurately and precisely controlled.
These include:

  1. Potential free relay contacts
  2. TTL output channels
  3. Serial communication ASCII string
  4. Analog , +/-10 Volt, 12 bit outputs

User-Friendly Software
Hiden’s IMP Series operates under the control of Windows™ MASsoft PC software - a powerful, user-friendly package offering extensive data handling and storage capabilities, on-board process statistics, networking and communications options, together with a wide range of intelligent trip controls and I/O facilities.

HIDEN IMP PROBE - TOTAL CONTROL IN DEVICE FABRICATION

Optimised Response For Etch Rate Monitoring
The Ion Milling Probe is used in a wide range of production applications where precise identification of interfaces in multilayer devices is important to maintain, and improve, yields. In new product development, where etch rate and depth profiling are critical to a complete understanding of device performance, system versatility provides for a wide range of complex materials and devices to be evaluated.

On-Board Library Of Etch Products
The control interface and software enable the preferred ion to be automatically selected from our built-in library of interface materials. With the etch products identified
the system monitors, and displays, intensity data over time to give a real-time read out of the process status. All information is automatically stored to allow data review, manipulation, statistical analysis and export to other programs.

Process Integration For Hands Free Operation
Logic I/O is provided to enable automated operation of the process tool with minimal operator intervention. Data acquisition can be initiated by the process tool and, with the end point reached, etching terminated by the Ion Milling Probe - the whole process completed without the need for manual start/stop.
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Features of IMP End Point Detector
  • High Sensitivity SIMS / MS with Pulse Ion Counting Detector.
  • Triple filter Quadrupole, 300 amu mass range is standard.
  • Differentially Pumped Manifold With Mounting Flange to Process Chamber.
  • Ion Optics with Energy Analyser and integral ioniser.
  • Penning Gauge and interlocks to provide over pressure protection.
  • Data System with integration to the process tool.
  • Stability (less than ±0.5% height variation over 24 h).
  • MASsoft control via RS232, RS485 or Ethernet LAN.
  • Programmable DDE, Parallel Digital I / O, RS232 Scripting Communication.

Performance Benefits

MR Sensors In MR and GMR head fabrication Hiden’s IMP Probe, specifically designed for cluster tool integration, provides rapid, point-of-use end point detection. Data obtained during the milling of a Ta/NiFe/Pt multilayer structure is illustrated. Each interface is clearly identified and allows milling to be accurately terminated at the desired depth.

High Temperature Superconductors Hiden’s IMP Probe provides a reliable method for determining milling depths in the processing of high temperature superconductors. The system is designed to allow differentiation between materials with similar structure and chemical properties (for example YBa2Cu3O7 and PrBa2Cu3O7). The data illustrates the results of ion beam milling through a YBa2Cu3O7 - PrBa2Cu3O7 bilayer. Profiles from ionic Pr and Y intensities clearly display the device interfaces.

III-V Semiconductors The system is ideally suited to the study of the rapidly expanding range of III-V materials. Providing for precise analysis of multi-quantum well structures, the IMP probe delivers real time device characterisation in a compact, user-friendly, bolt-on package. Data acquired during the milling of AlGaAs/GaAs is displayed. Etching is terminated at the centre of the 79 Å GaAs well, to within +/-5 Å.

General Specifications
Mass Spectrometer TypeQuadrupole Mass Analyzer
Additional Specifications

Ion Milling Probe
Mass Range: 300.
Mass Filter: Triple filter assembly.
Energy Filter: 0 to 100 eV.
Ion Source: Twin filament, radially symmetric, electron impact.
Detector: Pulse Ion Counting Channeltron.
Dynamic Range: 7 decades.
Sensitivity: A primary argon ion beam of 2.5 kV, 0.5mA/cm-2 onto an aluminium target will yield current at m/e 27 of >106 counts/sec. with probe to target distance of 75 mm.
Bake-out Temperature: 250°C.
Maximum Operating Pressure: 5 x 10-6 Torr without differential pumping. 10-3 Torr with differential pumping.
Mounting Flange: DN-63-CF.
Minimum Port Size: 60 mm.

Vacuum System
Pumping: UHV vacuum manifold with 60 l/s turbomolecular pump set.
Gauges: UHV Penning with controller including pressure sensing set-point and relay output for fail-safe operation.

System Control
Operating System: Windows 3.x / Windows 95 / Windows NT.
Communication: RS232, RS422, RS485, Ethernet LAN.
Inputs/Outputs: Two 16 bit analog inputs as standard, eight channel input module optional. One 0 to ±10 Volt analogue output as standard, up to sixteen 12 bit outputs optional. Five logic level I/O channels plus two relay outputs included as standard.
Alarms: Extensive alarm options including high-to-low/low-to-high status indication with message send capability.
Vacuum Protection: Overpressure monitor for filament protection in RGA mode. External trip input from external pressure gauge for End Point Monitoring.

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